Moreover, characteristics of silicon carbide such as higher breakdown electric field strength, wider band gap, lower thermal expansion, and resistance to chemical reaction, enable it to gain an edge over traditional silicon semiconductors in the power semiconductors market. It exhibits a level of hardness that is approximately equivalent to a diamond, which enables SiC semiconductors to operate in extreme conditions. Silicon carbide is a semiconductor developed by the combination of silicon and carbon. This region is expected to grow at the fastest rate during the forecast period. In 2017, the Asia-Pacific region constituted the highest share in the global silicon carbide power semiconductors market. The global silicon carbide power semiconductors market size was valued at $302 million in 2017 and is projected to reach $1,109 million by 2025, registering a CAGR of 18.1% from 2018 to 2025. Silicon Carbide Power Semiconductors Market Overview:
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